Abstract
A novel gallium effusion cell consisting of a sapphire crucible in a variable temperature profile furnace was used to grow GaAs layers. The effect of the gallium source temperature profile on gallium source-related oval defects was investigated. By minimizing gallium droplets in the orifice, the gallium-related oval defect density was reduced to <50 cm−2 for a 1-μm-thick layer. These results indicate that oval defect densities can be further reduced by eliminating gallium droplets in the crucible orifice.
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