Abstract
The effects of AlGaAs layer thickness and GaAs cap layer thickness in the emitter of abrupt npn AlGaAs/GaAs heterojunction bipolar transistors on the performance of devices were investigated experimentally. It was found that only 500 Å of A10.25Ga0.75As layer in the emitter is enough to produce high injection efficiency and a small signal current gain of more than 1100
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