Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes

Abstract

We report a reduced the unwanted hole blocking of the electron blocking layer (EBL) by replacing the conventional EBL with a quaternary-ternary superlattice electron blocking layer. The effective barrier height for holes is reduced from ~ 348 meV to ~ 261 meV, thus, improving the concentration of holes by ~ 50% with respect to LED with conventional EBL. Similarly, the radiative recombination rate is also improved by ~ 79%. As a result, the overall droop ratio of internal quantum efficiency (IQE) of the proposed LED is reduced to ~ 23% at 100 A/cm2 in comparison to conventional LED.