Abstract
We report the results of crystal growth of thick AlGaN films on periodical 1 μm spacing AlN pillar concave-convex patterns and their impact on the performance of UV-B laser diodes. The formation of voids in the AlGaN film by increasing the AlN pillar height and the use of high-quality AlN templates were effective in improving the quality of AlGaN, and the dislocation density in the AlGaN film was reduced to approximately 3.4 × 108 cm−2. A UV-B laser diode was fabricated on the optimized AlGaN, demonstrating a threshold current density of ∼12 kA cm−2 and a high yield rate of over 90%.
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