Abstract
Dielectric properties (/spl epsiv/ and tan /spl delta/) of thin sputtered tantalum oxide films have been measured in the low frequency range. Anomalous large values of /spl epsiv/ and tan /spl delta/ have been observed at high temperatures above 100/spl deg/C. The heating of the substrate during the sputtering has a significant effect on the dielectric properties of the Ta oxide thin films. Samples prepared at substrate temperature above 200/spl deg/C show very low dielectric loss.
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