Reduction of Defect Density of ZnCdSe on InP Substrates by Introducing BeZnTe Buffer Layers

Abstract

The extended defect density of ZnCdSe on InP substrates was successfully reduced by introducing BeZnTe buffer layers. A very low etch pit density (EPD) around 7 x 10 3 cm -3 was obtained for ZnCdSe layers grown on BeZnTe buffer layers. In the photoluminescence (PL) measurements at 15 K for the ZnCdSe sample, sharp emission spectra without any deep-level emissions were observed around 579 nm.