Abstract
By using a novel co-dopant technique in the metalorganic chemical vapor deposition (MOCVD) process, we have achieved very low deep level densities (N t<5×1013 cm-3) and improved optical properties in Zn-doped (N A-N D=1×1018 cm-3) Al0.2Ga0.8As epitaxial layers. This technique employed both p- (Zn) and n-type (Se) dopants in the growth of p-type Al0.2Ga0.8As. Samples were characterized by deep level transient spectroscopy (DLTS) and photoluminescence (PL). We have found that a small amount of Se (n∼8×1016/ cm3) in Zn-doped (p∼1×1018/ cm3) Al0.2Ga0.8As will significantly reduce the density of deep level impurities (by more than one order of magnitude) and increase the photoluminescence efficiency.
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