Abstract
AbstractTwo‐dimensional transient analysis of GaN MESFETs with a semi‐insulating buffer layer is performed in which a deep donor and a deep acceptor are considered in the buffer layer, and the results are compared between the two cases with and without a field plate. It is shown that buffer‐related drain lag is reduced by introducing a field plate because trapping effects become smaller. It is also shown that current collapse and gate lag are also reduced in the field‐plate structure. The dependence on SiN passivation layer thickness is also studied, indicating that there is an optimum SiN thickness to minimize the buffer‐related current collapse and drain lag in GaN‐based FETs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
