Abstract
Reduction of the transient diffusion of B, implanted in Si along [100] at 10 keV to a dose of 1×1013/cm2, after annealing at 900 °C for 10 s has been observed in samples irradiated with 1.0 MeV 29Si ions to a dose of 5×1013/cm2 or higher. A lower Si dose did not influence the transient B tail diffusion. Secondary defects formed near the peak of the 1 MeV Si damage distribution, for doses of 5×1013/cm2 and higher, act as efficient sinks for interstitials from shallower depths and thereby reduce the transient tail diffusion.
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