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Abstract
Polycrystalline samples of (Bi1-xInx)2Se2.7Te0.3 (x = 0.00, 0.02, and 0.04) were prepared by the solid-state reaction technique. X-ray diffraction pattern confirms that the polycrystalline samples have a hexagonal structure with spacegroup Rstackrel{-}{3}m. The surface morphologic study reveals the existence of porous behavior in the studied samples due to the volatilization of Selenium. Energy dispersive X-ray analysis validates the expected and observed elemental composition of the samples. Electrical resistivity has shown metallic behavior. Hall effect and Seebeck coefficient measurements indicate the p-type and n-type conduction for the pristine sample Bi2Se3 and the (Bi1-xInx)2Se2.7Te0.3 samples, respectively. The thermal conductivity and electrical resistivity were found to reduce by 7.5 and 9 times, respectively, for (Bi0.96In0.04)2Se2.7Te0.3 compared to the pristine sample Bi2Se3.
Highlights
One of the best solutions for renewable energy is thermoelectric (TE) materials, which convert waste heat into electricity and vice versa and provide better management for clean and green energy production [1]
The shift in X-ray diffraction (XRD) peak position is due to the insertion of the larger ionic radius atom tellurium onto the smaller ionic radius of Selenium site
We report low and near room temperature (10–350 K) thermoelectric properties of the (Bi1xInx)2Se2.7Te0.3 system
Summary
One of the best solutions for renewable energy is thermoelectric (TE) materials, which convert waste heat into electricity and vice versa and provide better management for clean and green energy production [1]. The alloys based on Bismuth Selenide and Bismuth Telluride have been studied extensively as representative materials for thermoelectric applications near room temperature. Quentin et al [8] have reported the thermoelectric performance of Cu-doped n-type Bi2Te3 with ZT of 0.1 at 300 K. Enhanced thermoelectric properties of phase-separating bismuth selenium telluride thin films via a two-step method was reported by Masayuki et al [14]. Jana et al [15] reported the thermoelectric properties of Bi2Se3 thin film with the Seebeck coefficient of 150 lV/K by the vapor–solid technique. Thermoelectric properties of Bi2Te3 doped with different copper amounts have been reported by Lognone et al [16]. From the literature mentioned above, the effects of co-doping are much less studied in the chalcogenide thermoelectric materials in the low and near room temperature range (10–350 K)
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