Abstract
The ultraviolet photon-induced interface defects that degrade the performance of a semiconductor device are reduced by the optimal pulse repetition rate of a pulse-modulated inductively coupled plasma. The defect density depends on the pulse repetition rates; it takes minimum value at a few hundred pulses s−1 and peaks at a few k pulses s−1. The repetition rate-dependent behavior is suggested to be caused by the transient behavior between the plasma’s ON and OFF phases. Note that controlling the transient behavior for reducing the photon-induced damage is essential.
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