Abstract
The structural and thermoelectric transport properties of melt-grown Bi2Se3 single crystals are systematically investigated with the co-doping of Sn and Te in the temperature range 10–400 K. The powder X-ray diffraction and high-resolution X-ray diffraction studies confirm the hexagonal crystal structure with R3‾m space group. Images of the field emission scanning electron microscopy have shown crack-free smooth surface morphological features. Energy dispersive analysis of X-ray authorizes the chemical composition of elements in the samples. The degenerate semiconducting nature is observed in the entire series of samples with 6.8 times reduction in electrical resistivity for (Bi0.96Sn0.04)2Se2.7Te0.3 compared to the pristine Bi2Se3. The maximum ZT value of ∼0.32 is obtained for Bi2Se2.7Te0.3 single crystal at 400 K, about 7.4 times larger than that of Bi2Se3.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
