Abstract
Based on molecular dynamics simulations, we propose using nanostructure-patterned silicon for thermoelectric applications. Three typical examples are (i) fractal-like nanoporous Si, (ii) etched Si nanofilm, and (iii) quasi-periodic layered SiGe. All of them can exhibit very low thermal conductivity (less than 1.0 W m−1 K−1) and may be mass produced with standard fabrication techniques such as molecular beam epitaxy or Czochralski process. By maintaining good electronic transport of bulk Si, it is possible to achieve ZT∼5.0 at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
