Abstract
The reduction of optical losses in GaSb-based thermophotovoltaic converters via optimizing antireflection coatings and creating a back surface reflector on the photocell is reported. Upon the decrease in thickness of the GaSb substrate to 170 μm along with the lowering of its doping level to n ~2×1017 cm-3, the reflection coefficient of low-energy (λ < Eg) photons, R, is found to be ~ 0.7. A mathematical modeling at different temperatures and emitter materials shows that it is possible to increase the efficiency of thermophotovoltaic systems with tungsten and SiC emitters by 3% and 10.4% (at T = 1750 K), respectively, by using the back surface reflector with R ~ 0.7.
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