Abstract
Interfacial thermal resistance between metal and dielectric materials is a bottleneck of the thermal management for modern integrated circuits as interface density increases with thinner films. In this work, we have observed that the interfacial resistance across gold and aluminum oxide can be reduced from 4.8×10−8m2K/W to 1.4×10−8m2K/W after adding a nickel layer in between, which represents a 70% reduction. The two temperature model is applied to explain the reduction of interfacial resistance, and the results show that the nickel layer functions as a bridge that reduces the phonon mismatch between gold and aluminum oxide. Moreover, nickel has strong electron-phonon coupling, which reduces the thermal resistance caused by the weak electron-phonon coupling in gold.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
