Abstract
Narrow‐bandgap Sn–Pb‐alloyed perovskite is potential for a bottom cell in perovskite tandem solar cells. However, Sn‐contained perovskites tend to be readily oxidized in air atmosphere, which has ill influence on stability and photovoltaic performance. Herein, a method to suppress oxidation of divalent tin via post‐treatment of perovskite film with phenylhydrazine is reported. Phenylhydrazine‐treated FA0.5MA0.5Pb0.5Sn0.5I3 perovskite films effectively reduce the hole traps caused by the oxidation of Sn2+ on the perovskite surfaces. In addition, surface energetics are well aligned by post‐treatment, which is beneficial for voltage gain and charge transport. As a result, power conversion efficiency (PCE) is increased from 18.16% to 20.67% after post‐treatment due mainly to the significant improvement of open‐circuit voltage from 0.75 to 0.83 V. Furthermore, the device stability is improved, where 91.67% of initial PCE is maintained after 1000 h.
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