Abstract
The authors demonstrate that (111)B grown InGaAs∕AlGaAs laser diodes outperform their (100) counterparts, in terms of lower threshold currents observed for all temperature and cavity lengths tested. A low temperature threshold current density as low as 15A∕cm2 has been observed in (111)B grown devices, whereas identical (100) laser diodes exhibited threshold in the range of 30–40A∕cm2. The comparison of experimental findings with a Poisson-Schrodinger self-consistent model reveals that the improved performance of the (111)B devices is attributed to the piezoelectric field present in the (111)B In0.1Ga0.9As active quantum well as well as to the different heavy hole effective masses in the (111)B configuration.
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