Abstract
(GaIn)(NAs)/GaAs single quantum well (SQW) broad area lasers with emission wavelengths at 1.28 and 1.38 µm at room temperature on GaAs substrates have been realised by applying optimised low-temperature metal organic vapour phase epitaxy (MOVPE) using the group V sources 1,1-dimethylhydrazine (UDMHy) in combination with tertiarybutylarsine (TBAs). Record-low threshold current densities of 0.8 and 2.2 kA/cm2, together with high differential efficiencies of 0.18 and 0.16 W/A per facet, are obtained for 800 µm long broad area lasers emitting at 1.28 and 1.38 µm, respectively.
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