Reduced thermal conductivity of supported and encased monolayer and bilayer MoS2

Abstract

Electrical and thermal properties of atomically thin two-dimensional (2D) materials are affected by their environment, e.g. through remote phonon scattering or dielectric screening. However, while it is known that mobility and thermal conductivity (TC) of graphene are reduced on a substrate, these effects are much less explored in 2D semiconductors such as MoS2. Here, we use molecular dynamics to understand TC changes in monolayer (1L) and bilayer (2L) MoS2 by comparing suspended, supported, and encased structures. The TC of monolayer MoS2 is reduced from ∼117 W m−1 K−1 when suspended, to ∼31 W m−1 K−1 when supported by SiO2, at 300 K. Encasing 1L MoS2 in SiO2 further reduces its TC down to ∼22 W m−1 K−1. In contrast, the TC of 2L MoS2 is not as drastically reduced, being >50% higher than 1L both when supported and encased. These effects are due to phonon scattering with remote vibrational modes of the substrate, which are partly screened in 2L MoS2. We also examine the TC of 1L MoS2 across a wide range of temperatures (300 K to 700 K) and defect densities (up to 5 × 1013 cm−2), finding that the substrate reduces the dependence of TC on these factors. Taken together, these are important findings for all applications which will use 2D semiconductors supported or encased by insulators, instead of freely suspended.