Abstract
Magnetic tunnel junctions (MTJs) have recently been commercialized for memory applications, both as read-head sensors and non-volatile magnetic random-access memories (MRAMs) [1] . The key parameters of MTJs are resistance area (RA) product and write/switching current density ( J C ), which affect the device failure and decrease the stability due to localized heating. The RA and J C are critically influenced by the ferromagnet metal (FM)/tunnel barrier (TB) interface, which therefore, requires maintaining high quality while scaling down. Several techniques to reduce RA and J C include (1) thinning down the tunnel barrier (TB) effective thickness (EOT) [2] , (2) adding ultra-thin metal dust in TB, and (3) modulating the TB with different doping [3] , (4) using alternate nitrogen containing TB such as TiON, AlON, h-BN, and TiAlON that are deposited with reactive sputtering and reactive ion-beam deposition techniques [4] , [5] . On the other hand, room temperature oxynitride-MTJ has not been explored much in terms of TMR and J C .
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