Abstract
We report on time resolved femtosecond carrier dynamics in molecular beam epitaxy grown GaNxAs1−x with a nitrogen fraction of 1.3%. The intraband carrier relaxation time in GaNxAs1−x is found to be significantly larger than in GaAs. We compare the experimental results with carrier-polar optical phonon scattering rates calculated within the band anticrossing model. From the results we conclude that the slowing down of the carrier relaxation is a result of the strongly modified band structure in GaNxAs1−x.
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