Abstract
We demonstrated that Schottky barrier height (SBH) at the metal/CVD-grown MoTe2 interface can be significantly reduced with tunnel contact by inserting a thin Al2O3 layer regardless of the metal work function. The existence of strong Fermi level pinning (FLP) at the metal/MoTe2 interface was verified, while depinning cannot be achieved with Al2O3 insertion. Thus, the fixed charges inside the Al2O3 were proposed to be responsible for the effective SBH reduction in virtue of the eliminated SBH reduction after the post-annealing treatment. This work provides a feasible way to solve the contact issue and favors for the fabrication of high performance MoTe2-based electronic devices.
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