Abstract
This paper reports the growths of InGaN-based light-emitting diodes (LEDs) on the patterned sapphire substrates (PSSs) with enlarging the diameter of hexagonal hole can reduce the related quantum-confined Stark effect (QCSE) within multiple-quantum wells (MQWs), resulting in that the PL relative intensity is enhanced by up to 95% as compared to the conventional one.
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