Abstract
High aspect ratio silicon nanowires (Si NWs) are produced by metal‐assisted chemical etching (MacEtch) combined with a magnetic field. The vertically applied magnetic field enhances the adhesion between a catalytic metal film and a semiconductor surface. As a result, very uniform Si NWs are formed with increased etch rate due to an easy transfer of holes from metal to Si. Importantly, the porosity of the Si NWs is dramatically reduced by an applied magnetic field because the metal film quickly sinks into the Si, thereby decreasing the excess hole diffusion from the NW sidewall. The combined process of MacEtch and a magnetic field is a promising approach to form high aspect ratio Si NWs with minimized etching damage.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
