Abstract
Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n+/p junction are studied in this work. At an adequately high ion-implantation temperature (150°C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting $\sim 1\times 10^{6}~{J}_{ \mathrm{\scriptscriptstyle ON}}/{J}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio is achieved.
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