Abstract
A 1300 nm gain-clamped DFB multiple quantum well laser amplifier with negligible pass band ripple, 20 dB fiber to fiber gain, and 10 dB reduction in gain saturation is demonstrated. The remaining gain saturation is attributed to longitudinal hole burning. After some modifications the reduction in gain saturation is improved to more than 30 dB for an input signal having the same polarization state as the lasing mode. From these experiments and a theoretical analysis it is concluded that there is a potential for realizing highly linear 1300 nm CATV semiconductor laser amplifiers using gain-clamping with less intermodulation distortion than today's directly modulated linear semiconductor lasers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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