Abstract

Low temperature processed carbon-based perovskite solar cells (C-PSCs) have gained great interest because of low cost and ease of fabrication. By replacing the Au electrode with carbon, stable solar cells suited for mass-production process can be made. However, power conversion efficiencies (PCEs) of C–PSCs still lag behind that of PSCs with Au contact.Here we explore low temperature (≤150 °C) processed C-PSCs with, where a two-step method is used to prepare mixed-ion lead perovskite films, with tin oxide (SnO2) electron transport layer, poly(3-hexylthiophene-2,5-diyl) (P3HT) hole transport layer and carbon electrode, resulting in devices with a PCE of 14.0%. Moreover, hexyl trimethylammonium bromide (HTAB) was introduced to improve the interface between perovskite and P3HT. Perovskite grains were remarkably enlarged into micrometer-size and defects were reduced. As a result, a champion PCE of 16.1% was obtained, mainly due to enhanced fill factor from 0.67 to 0.73. The interface modification by HTAB molecule is an effective way to passivate the perovskite defects and facilitate the carrier transport at the perovskite/HTL interface. Unencapsulated devices showed excellent stability over 1500 h stored under ambient air (relative humidity ∼ 50 ± 10%).

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