Reduced Graphene Oxide Quantum Dot Light Emitting Diodes Fabricated Using an Ultraviolet Light Emitting Diode Photolithography Technique.

Abstract

Graphene quantum dots usually suffer from serious fluorescence quenching in aggregates and the solid state due to easy agglomeration and aggregation-induced quenching, which seriously restrict their practical applications. An ingenious strategy to kill three birds with one stone, the ultraviolet (UV) photolithography technique, was studied, and blue-emitting reduced graphene oxide quantum dot (rGOQD)-based light emitting diodes (LEDs) with efficient solid state emission were first fabricated using UV photolithography. First, rGOQDs were prepared by the in situ photoreduction of GOQDs by using the photoinitiator phenyl bis(2,4,6-trimethylbenzoyl)phosphine oxide with 395 nm UV LED exposure. Furthermore, rGOQD/photoresist patterns were prepared under the same conditions. Meanwhile, the in situ photoreduction of GO in the aforementioned photoresist to rGO was realized by UV photolithography to improve the conductivity of the rGOQD/photoresist films. Additionally, the in situ photoreduction of GOQDs in different surroundings was studied, with the results showing that GOQDs are more easily photoreduced in ionic liquids and that the photoluminescence spectrum obtained for rGOQDs exhibits a 70 nm blueshift with a narrow full-width at half-maximum compared to GOQDs.