Reduced graphene oxide field-effect transistor with indium tin oxide extended gate for proton sensing

Abstract

In this study, the reduced graphene oxide field-effect transistor (rGO FET) with indium tin oxide (ITO) extended gate electrode was demonstrated as a transducer for proton sensing application. In this structure, the proton sensing area of the ITO extended gate electrode is isolated from the active area of the rGO FET. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device with encapsulation by a tetratetracontane (TTC) layer showed good stability in electrolytic solutions. The device showed an ambipolar behavior with shifts in Dirac point as the pH of the electrolyte is varied. The pH sensitivity based on the Dirac point shift as a sensing parameter was about 43–50 mV/pH for a wide range of pH values from 2 to 12. The ITO extended gate rGO FET may be considered a potential transducer for sensing of H+ in electrolytes. Its sensing area can be modified further for various ions sensing applications.