Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

Abstract

AlInN/GaN high electron mobility transistors fabricated with the semi-insulating barrier layer was investigated to reduce the gate leakage current. The gate leakage current was obtained to be as low as 4.1 × 10−4 mA/mm at the gate bias of −10 V owing to the use of higher and thicker potential barrier of Mg-doped AlInN.