Abstract
A remarkable reduction of the gate leakage current for AlGaN/GaN high electron mobility transistors (HEMT) is reported. The oxygen plasma treatment of the fabricated HEMT at 200°C reduced the gate leakage current by four orders of magnitude without degrading the transconductance and the drain current characteristics of the HEMT. X-ray photoelectron spectroscopy analysis showed that the binding of oxygen at the AlGaN surface is related to the reduction in the leakage current.
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