Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures

Abstract

We describe the effectiveness of filter layers, which displace misfit dislocation (MD) formation away from the active region, in improving high temperature reliability of epitaxially integrated InAs quantum dot lasers on on-axis silicon substrates. We find that inserting these “trapping layer (TL)” filters at either 80 nm or 180 nm from the active region substantially reduces device degradation at 60 °C. After 3000 h of continuous operation, the best trapping-layer-free device shows a 55% increase in threshold current while the best trapping layer (TL) devices each show less than a 9% increase. We explain these findings by correlating changes in individual device performance to changes in misfit dislocation (MD) structure. All MDs in devices without TLs show evidence of recombination enhanced dislocation climb (REDC); in contrast, adding trapping layers at 180 nm or 80 nm reduces the fraction of electrically active MDs to 9% and 1%, respectively. Reliability data after 3000 hours suggest that incorporating trapping layers a shorter distance from the active region (80 nm) is more effective than incorporating these layers further away. We conclude by identifying the mutually and self-reinforcing failure processes associated with REDC that TLs significantly remediate: increasing dislocation line length, increasing point defect densities, and increasing junction temperature. Overall, understanding and controlling crystal defects continues to be the most impactful avenue toward integrating light sources on photonic integrated circuits and closing the gap with native-substrate lasers.