Reduced contact resistance and highly stable operation in polymer thin-film transistor with aqueous MoOx solution contact treatment

Abstract

We report on a newly developed solution process using MoO3 for reducing source and drain (S/D) electrodes in organic thin-film transistor (TFT). By taking advantage of the difference in surface wettability between the gate dielectric layer and the S/D electrodes, the electrode treatment using the MoOx solution was applied to polymer TFT with short channel lengths less than 10μm. The contact resistance was noticeably reduced at the interface of the S/D electrodes in a polymer TFT using a pBTTT-C16. Furthermore, the field effect mobility for this TFT was enhanced from 0.03 to 0.1cm2/Vs. Most notably, the threshold voltage (Vth) shift under gated bias stress was less than 0.2V after 105s, which is comparable to that of conventional poly crystalline Si TFT.