Abstract
We theoretically studied the role of a InGaAs and InAlAs strain-reducing layer (SRL) with different thicknesses and indium compositions covered on InAs/GaAs self-assembled quantum dots (QDs). The ground-state transition wavelength increases as the thickness and indium composition of the SRL increase. The energy separation between ground state and excited state can achieve the maximum by a proper design. The redshift is due to (1) the strain reducing in QD, (2) the potential barrier, and (3) effective mass reducing in SRL, but the latter two tend to cancel each other and the energy level separation is mainly determined by (2) and (3).
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