Abstract
Abstract A new ferrocene-containing iridium(III) complex (complex 2) has been designed and synthesized. Its structure, photophysical property, electrochemistry and memory behaviors were well investigated. The memory device with a sandwich structure of ITO/complex 2/Al (D2) exhibited flash memory performance with a bistable conductive process, which showed a high ON/OFF current ratio of 103, long retention time of 103 s, and low threshold voltage of −0.55 V. After 105 read cycles, no significant degradation was observed in the ON and OFF states at a read voltage of 1.0 V. The ferrocene group of complex 2 serves as the redox-active unit, and a redox memory mechanism is proposed to explain the conductive process based on the analysis of I–V, cyclic voltammetry and theoretical calculation data. Thus, the design of redox-active metal complex used for novel non-volatile memory device provided an alternative strategy for the further development of organic memory materials and devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
