Abstract
Si-doped and undoped GaAs 1- x N x layers are grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with low nitrogen content. The Si-doped effect has been analyzed by photoluminescence (PL) measurements. At low laser power excitation the PL spectra of undoped layer are formed by GaAsN band level and several features attributed to the nitrogen localized states. For Si-doped layer, the GaAs 1- x N x N x band level disappears and the large band attributed to the nitrogen localized states changes the form. At high laser power excitation, the PL spectrum is formed by only one peak corresponding to the most dominating nitrogen localized state. By comparing the doped and undoped layers, we note that the presence of silicon in the structure reduce the exciton bound energy to the nitrogen localized states.
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