Abstract
AbstractThe redistribution of implanted Mn ions in Si after thermal annealing is studied. P-type Si wafers were implanted with 300-keV Mn+ ions at 350°C to a dose of 1×1015 cm-2, and then annealed at 800 °C for 5 min. Ferromagnetic hysteresis loops were obtained at 10 K using a SQUID magnetometer both before and after annealing. The saturation magnetization increases by ∼2 × after the post-implant annealing, while the Mn redistributes with sharp peaks in concentration. The calculated point-defect profile created during the implantation process peaks around the Mn-depleted region, suggesting that the residual implant damage may play a role in the ferromagnetic behavior of Mn-implanted Si.
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