Abstract
We show that implanted oxygen in GaAs has two different thermal behaviours depending on the implantation dose. In the case of low doses, below 1014 oxygen-cm−2 oxygen diffuses very quickly at 900°C. In the case of high doses, above 1014 oxygen-cm−2, oxygen piles up around its projected range during annealing. This should be due to the formation of precipitates. The presence of substrate impurities in the nucleation process is not suspected.
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