Redistribution of implanted oxygen and carbon in silicon

Abstract

This paper reports new experimental results on the measurements of oxygen and carbon in silicon. 18O and 13C in-depth distribution has been measured in silicon as a function of postimplant furnace and laser annealing using secondary ion mass spectroscopy. Analysis shows that a complicated structure appears in the 18O atomic profile following 900–1100 °C furnace annealing. The 18O redistribution is substantially caused by implantation-induced damage gettering of 18O in silicon. Because of a fast annihilation of displacement damages by laser annealing, any complicated redistribution was not observed in the laser-annealed 18O atomic profile. No such structure was observed in the furnace- and laser-annealed 13C atomic profiles, implying some differences in the atomic behavior of carbon and oxygen in silicon.