Abstract
The redistribution of implanted atoms within GaAs/AlAs multilayer structures due to post-implantation furnace annealing is reported. The structures were grown using molecular-beam epitaxy on GaAs substrates and implanted with either hydrogen or beryllium ions. After furnace annealing at temperatures up to 700 °C, these samples were examined using secondary ion mass spectrometry. The measurements show that the hydrogen and the beryllium atoms redistribute with post-implantation annealing and that both species accumulate at the buffer layer-substrate interface. The concentration of atoms at this interface can exceed 1×1019 cm−3 and may be related to the crystal imperfections created during the inital stages of epitaxy. The significant redistribution of implanted ions may also alter the optoelectronics properties of multilayer semiconductor structures processed in this manner.
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