Abstract
In this work we present results of beryllium diffusion during the post-growth rapid thermal annealing at 700–900°C in InGaAsP layers grown by GSMBE. The experimental structure consist of a 2000 A Be-doped layer (3×1019 cm–3) In0.73Ga0.27As0.58P0.42 layer sandwiched between 5000 A undoped In0.73Ga0.27As0.58P0.42 layers. A kick-out model of the substitutional-interstitial diffusion mechanism, which involves neutral Be interstitial species and positively charged group III self-interstitials, is proposed to explain the observed SIMS depth profiles.
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