Abstract
Traces of transition metals (Fe, Cr and Mo) were inadvertently introduced into buried oxide silicon-on-insulator structures during oxygen implantation in a medium current implanter. The redistribution of these metal impurities during post-implantation annealing between 900 and 1300 degrees C was studied by secondary-ion mass spectroscopy. The microstructure of the as-implanted and annealed specimens was characterized by transmission electron microscopy (cross-sectional and plan view). Auger electron spectroscopy was used to investigate the oxygen depth profiles. A correlation is shown between the density and depth distribution of Fe, Cr and Mo and the microstructural changes that occur upon annealing. The redistribution of Fe and Cr was found to be strongly influenced by damage recovery whereas Mo remained immobile during heat-treatment. These results are discussed on the basis of diffusion mechanisms, radiation-enhanced diffusion, supersaturation of silicon interstitials, surface segregation, metal impurity precipitation and dislocation trapping.
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