Red organic light-emitting devices with dotted-line doped emitting layers

Abstract

High efficiency red organic light-emitting devices (OLEDs) with several dotted-line doped layers (DLDLs) were fabricated by using an ultra-high vacuum organic molecular-beam deposition system. The red OLEDs consisted of indium-tin-oxide (ITO)/N, N′-diphenyl-N, N′-bis(1-naphthyl)-(1, 1′-biphenyl)-4, 4′-diamine ( α -NPD): 40 nm/tris(8-hydroxyquinoline)aluminum (Alq 3)+4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetra-methyljuloldyl-9-enyl)-4H-pyran (DCJTB); 3%wt.: x nm/(Alq 3+DCJTB; 3%wt./ Alq 3) n−1 : ( 30 − x ) nm/ Alq 3: 30 nm/Mg:Ag with n of 2, 4, 6, or 8, and x = 30 / ( 2 n − 1 ) . The luminance yield of the device with 8 DLDLs was 75% higher than that of the device with a common doped layer. This was attributed to more formation of the excitons formed in a wider region resulting from the existence of the DLDLs. The dominant mechanisms of the dopant emission for the devices with DLDLs were described on the basis of the sequential carrier trapping process.