Abstract
Red-emitting (SrxCa1−x)AlSiN3:Eu2+ (SCASN:Eu2+) phosphors were successfully prepared by spark plasma sintering (SPS) at a relatively low temperature of 1700°C in vacuum (200 mtorr). The synthesized phosphors showed a broad absorption band from near UV to yellow region (300 ∼ 600 nm) and exhibited a single broad emission band centered at 626 ∼ 653 nm under the excitation of 450 nm. The effects of Sr occupancy and Eu doping concentration on the photoluminescence (PL) properties of SCASN:Eu2+ phosphors were examined. In addition, the temperature dependence of the PL intensity and the emission characteristics of white light-emitting InGaN-based β-sialon:Eu2+/SCASN:Eu2+ LED were compared with those of commercial YAG:Ce3+ phosphor and InGaN-based YAG:Ce3+ LED, respectively.
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