Abstract
Bright and sharp photoluminescence was obtained from Eu-doped GaN films grown by gas-source molecular beam epitaxy using ammonia. It was found that the decrease in luminescence intensity is small between 80 K and 300 K, compared with the red emission from InGaN. The red emission from Eu-doped GaN also showed only a small peak shift within 1.6 meV in the same temperature range. From these results, the advantage of using Eu-doped GaN as a stable optoelectronic material against temperature variation is shown.
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