Rectifying effect through the interface of SrTiO3−δ/GaAs heterojunctions

Abstract

Oxides-semiconductor junctions have attracted great attention and exhibited promising potential in integrated devices in which the passing current is controlled by applying voltage. It is found that an oxygen-deficient SrTiO3−δ/p-GaAs junction displays an obvious rectifying effect. The SrTiO3−δ thin film is in the anomalous in-plain compressive strain, as confirmed by structural characterization. Investigations on the current–voltage curve show that the current decreases with the increasing temperature at the reverse bias, which suggests that the rectifying behavior may be attributed to the strain-assisted tunneling mechanism. The effect of strain or film thickness on the transport property is also discussed.