Abstract
The rectifying characteristics of a Mo/SiC Schottky contact fabricated by facing targets sputtering system were investigated through current–voltage measurement. The Schottky diode parameters were extracted from the forward current–voltage characteristic curve by the Cheung and Cheung method and the Norde method. The as-deposited Mo/SiC Schottky contacts possessed Schottky barrier heights of 1.17 and 1.22 eV, respectively. The Schottky barrier heights of the diodes were decreased to 1.01 and 0.91 eV after annealing at 400 °C for 30 min. The ideality factor was increased from 1.14 and 1.08 to 1.51 and 1.41, respectively. This implies the presence of non-ideal behaviors due to a current transport mechanism other than ideal thermionic emission, and the non-ideal behaviors increased as a result of excessive thermal annealing. In contrast, only a negligible change was observed in the crystallographic characteristics. This result suggests that the reason for the deviation from the ideal rectifying characteristics of the Mo/SiC Schottky contact through the annealing process was the variation in the current transport mechanism, including recombination, tunneling, and/or minority carrier injection.
Highlights
Remarkable progress has been made in the field of power electronics
By far, the most used material in power electronics; performance improvements are restricted by the limited inherent characteristics of Si [1]
Silicon carbide (SiC), which is an indirect energy-gap semiconductor, is the most promising material for next-generation power semiconductor devices and could be an attractive alternative to silicon with superior properties in the field of power electronics
Summary
Remarkable progress has been made in the field of power electronics. Silicon carbide (SiC), which is an indirect energy-gap semiconductor, is the most promising material for next-generation power semiconductor devices and could be an attractive alternative to silicon with superior properties in the field of power electronics. Gallium nitride (GaN), which is a direct energy-gap semiconductor, is one of the representative materials in power electronics field. SiC has higher thermal conductivity than GaN; SiC is regarded as a promising material in power electronics field. SiC possesses superior characteristics compared to Si, including high thermal conductivity (4.9 W/cm·K), dielectric breakdown field (2.5 mV/cm), saturated electron velocity (2 × 107 cm/s), and wide band-gap energy (3.26 eV). SiC-based power electronic devices could achieve considerably higher voltage-blocking capacities with a smaller size, owing to their excellent electrical properties [3]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
