Rectifying Characteristics of the Perovskite Oxide La1−xSrxMnO3/Nb‐0.7 wt%‐Doped SrTiO3 Heterojunction

Abstract

The influence of Sr‐doping on the rectifying characteristics of the perovskite oxide La1−xSrxMnO3/Nb‐0.7 wt%‐doped SrTiO3(LSMO/NSTO) heterojunction is studied systematically. Clear rectification characteristics are observed in the Au/LSMO/NSTO heterojunction with Sr‐doping rate of 0.1–0.6 at 300 K. The threshold voltage and Schottky barrier height increase linearly with the increase in Sr‐doping. Combined with first‐principles calculations, it is found that the variation of Sr‐doping concentration directly leads to a change in the LSMO work function, then a change in barrier height, and finally a change in the threshold voltage and rectification characteristics. Ultimately, it is proved that the rectification characteristics of the perovskite metal oxide heterostructure are consistent with the potential barrier mechanism of semiconductors. The rectifying characteristics of the perovskite oxide p–n junction can be well modulated by the change in energy band structure caused by Sr‐doping. These results lay a foundation for further understanding of the rectification characteristics of the perovskite oxide heterostructure and improving its application value.