Abstract
The electrical properties of metal–insulator–insulator–insulator–semiconductor nanostructures as rectifiers are investigated. Ultra-thin insulator layers of Al2O3/TiO2/Al2O3 having 2 nm/1 nm/2 nm in thickness are deposited by the atomic layer deposition to enhance resonant tunneling under substrate and gate injection. Superior low-voltage, large-signal, and small-signal nonlinearities such as an asymmetry of 45 at 1 V and a non-linearity of 19 V−1 are obtained.
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