Abstract
The Mn3CuN/n-Si heterojunction device is first designed in the antiperovskite compound, and excellent rectifying characteristics are obtained. The rectification ratio (RR) reaches as large as 38.9 at 10 V, and the open-circuit voltage Voc of 1.13 V is observed under temperature of 410 K. The rectifying behaviors can be well described by the Shockley equation, indicating the existence of a Schottky diode. Simultaneously, a particular semiconductor-metal transition (SMT) behavior at 250 K is also observed in the Mn3CuN/n-Si heterojunction. The interfacial band bending induced inversion layer, which is clarified by the interfacial schematic band diagrams, is believed to be responsible for the SMT and rectifying effects. This study can develop a new class of materials for heterojunction, rectifying devices, and SMT behaviors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
